Материал сердцевины коротковолнового инфракрасного светодиодного чипа SWIR LED 1000-2500 нм

SWIR LED chip materials primarily belong to III-V compound semiconductors.

В зависимости от целевой длины волны (обычно в диапазоне от 1050 до 2500 нм), К наиболее часто используемым материалам относятся:

InGaAs (Indium Gallium Arsenide): The most mainstream material for SWIR. By adjusting the ratio of Indium to Gallium, it can cover the majority of the short-wave infrared spectrum (например, 1050nm–1700nm).
InP (Indium Phosphide): Frequently used as the substrate for epitaxial growth or for high-performance flip-chip structures.
GaAs (Gallium Arsenide): Often used for shorter wavelengths near the NIR border or as a foundational layer in epitaxial structures.
GaSb (Gallium Antimonide): Utilized when the application requires longer wavelengths, typically exceeding 2000nm.

These materials are chosen because their bandgap specifically corresponds to the energy of SWIR photons, whereas traditional Silicon (Si) is transparent and ineffective in this range.