SWIR LEDのコア材料 1000-2500nmの短波赤外線LEDチップ

SWIR LED chip materials primarily belong to III-V compound semiconductors.

Depending on the target wavelength (typically ranging from 1050nm to 2500nm), the most commonly used materials include:

InGaAs (Indium Gallium Arsenide): The most mainstream material for SWIR. By adjusting the ratio of Indium to Gallium, it can cover the majority of the short-wave infrared spectrum (例えば, 1050nm–1700nm).
InP (Indium Phosphide): Frequently used as the substrate for epitaxial growth or for high-performance flip-chip structures.
GaAs (Gallium Arsenide): Often used for shorter wavelengths near the NIR border or as a foundational layer in epitaxial structures.
GaSb (Gallium Antimonide): Utilized when the application requires longer wavelengths, typically exceeding 2000nm.

These materials are chosen because their bandgap specifically corresponds to the energy of SWIR photons, whereas traditional Silicon (Si) is transparent and ineffective in this range.