محور 1000-1750NM LED
Based on the Indium Phosphide (في ص) substrate or the InP material system, the core epitaxial layers, quantum wells, and ohmic contact layers of Short-Wave Infrared (سوير) LEDs are primarily composed of the following semiconductor materials.
Here are the Chinese names و English names (with chemical formulas) listed separately:
- فوسفيد الإنديوم (في ص): Used as the native growth substrate. Its lattice constant serves as the foundation for growing matching epitaxial layers.
- إنديوم جاليوم زرنيخيد (InGaAs): The primary active (light-emitting) quantum well layer. Altering the In/Ga ratio allows customization of wavelengths from 1000 nm up to 1900 نانومتر
- Indium Gallium Arsenide Phosphide (InGaAsP): Commonly utilized for barrier layers, cladding layers, or waveguide structures to finely tune energy bandgaps.
- Indium Aluminum Arsenide (InAlAs): Employed as a wide-bandgap cladding layer or electron-blocking layer (EBL) to suppress carrier leakage and improve efficiency.
- Indium Aluminum Gallium Arsenide (InAlGaAs): A quaternary compound used in advanced high-power structures for flexible bandgap engineering in quantum wells and barriers.
- زرنيخيد الغاليوم (GaAs): Sometimes used in highly doped cap or contact layers to reduce ohmic contact resistance with metal electrodes.
