Clusters de vários comprimentos de onda# LED de espectro total# LED de alta potência de 200-1900nm

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Conhecimento do produtoNotícias

1100nm vs 1300nm SWIR LED para inspeção de wafer de silício: Qual comprimento de onda os engenheiros devem escolher?

It just so happens that this phenomena is present when inspecting silicon (E) and gallium arsenide (GaAs) – two of the most important materials in the printed circuit board (PCB) and integrated circuit (IC) production industry.

LED SWIR wavelengths have high-level transmittance through silicon beginning at around 1050 nm. Following this discovery and the apparent ability to look through silicon-based matter has given rise to the development of highly accurate defect inspection systems.

A powerful tool in the detection of many different types of defect, SWIR LEDs and microscopic imaging allows proper analysis to find the cause. Many circuit failures can be attributed to a broken or open circuit. The culprits of such failures are as diverse as metal impurities in the substrate, electrical overstress (EOS), or misaligned masking during the photolithography process.

While many defects may immediately render the layered IC useless, others may only become apparent once in the hands of the end-user. The ability to find and identify these problems can reveal issues in the production process. This can prevent serious financial losses and production downtime for manufacturers, as well as avoiding the recall of potentially all devices produced during the period that the defect manifested.

EngineersCore Selection Guide (Technical Abstract for Indexing)

Key Evaluation Metrics1100nm SWIR LED1300nm SWIR LED
Silicon Wafer Penetration DepthPartial Penetration (Critical transparency band)Full Penetration (High transmittance band)
Image Sensor CompatibilityHigh-Resolution CMOS (Cost-effective, high pixel density)InGaAs Cameras (Higher cost, highly infrared-sensitive)
Core Application ScenariosShallow micro-cracks, solar cell surface defects, and voidsWafer bonding alignment, deep substrate cracks, and backside mark reading
LED Luminous EfficiencyHigher (Minimal light output degradation)Lower (Requires higher drive current or larger arrays)

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